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| SUD30N03-30 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.030 @ VGS = 10 V 0.045 @ VGS = 4.5 V ID (A) "30 "25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 "30 "21 "40 30 50 3a -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on 4" x 4" FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70268 S-57253--Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA RthJC Limit 50 3.0 Unit _C/W 2-1 SUD30N03-30 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A DiS OS Ri Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 15 A, TJ = 125_C VGS = 10 V, ID = 15 A, TJ = 175_C VGS = 4.5 V, ID = 12.5 A Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 10 30 0.020 0.033 0.036 0.030 22 0.030 0.050 0.054 0.045 S W 30 V 1.0 "100 1 50 150 A mA A nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0 5 W V, 0.5 ID ^ 30 A, VGEN = 10 V RG = 7 5 W A V, 7.5 V, VDS = 15 V, VGS = 10 V ID = 30 A V VGS = 0 V, VDS = 25 V, f = 1 MHz 1170 320 60 18 5.5 2 10 10 25 15 20 20 ns 40 30 35 nC C pF F Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 30 A, VGS = 0 V IF = 30 A, di/dt = 100 A/ms 1.1 50 40 1.5 100 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70268 S-57253--Rev. D, 24-Feb-98 SUD30N03-30 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10, 9, 8, 7, 6, 5 V 32 I D - Drain Current (A) I D - Drain Current (A) 32 40 Transfer Characteristics 24 4V 16 24 16 8 3V 0 0 1 2 3 4 5 8 TC = 150_C 25_C -55_C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 30 TC = -55_C 24 g fs - Transconductance (S) 25_C r DS(on) - On-Resistance ( ) 0.06 0.05 0.04 0.03 0.02 0.01 0 0 8 16 24 32 40 0 0.07 On-Resistance vs. Drain Current 18 125_C VGS = 4.5 V 12 VGS = 10 V 6 0 8 16 24 32 40 ID - Drain Current (A) ID - Drain Current (A) Capacitance 1500 Ciss 1200 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 8 10 Gate Charge VDS = 15 V ID = 30 A 900 Coss 600 6 4 300 Crss 2 0 0 6 12 18 24 30 0 0 3 6 9 12 15 18 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70268 S-57253--Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 SUD30N03-30 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.8 VGS = 10 V ID = 15 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.6 r DS(on) - On-Resistance ( ) (Normalized) 1.4 TJ = 175_C 1.2 10 TJ = 25_C 1.0 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. CaseTemperature 35 200 100 28 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) Safe Operating Area 21 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 14 1 7 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 3 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70268 S-57253--Rev. D, 24-Feb-98 |
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